6.774 Physics of Microfabrication: Front End Processing, Fall 2004
A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)
課程重點
This course features a full set of audio lectures in the lecture notes section. In addition, a number of assignments are available.
課程描述
This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).
技術需求
RealOne™ Player software is required to run the .rm files found on this course site.
