MIT OpenCourseWare


» ¶i¶¥·j´M
 ½Òµ{­º­¶
 ±Ð¾Ç¤jºõ
 ±Ð¾Ç®Éµ{
 ¹ê§@½Òµ{
 §@·~
 ¨Ï¥Î¤u¨ã©Î³nÅé
 ¤U¸ü½Òµ{

¨Ï¥Î¤u¨ã©Î³nÅé


¥»­¶Â½Ä¶¶i«×

¿O¸¹»¡©ú

¼f©w¡GµL
½Ķ¡Gù¥ú®ü(²¤¶¨Ã±H«H)
½s¿è¡G¦¶¾ÇùÚ(²¤¶¨Ã±H«H)

¸Ó³¡¤À©ÒÁ|ªº¨Ò¤l§¡¨Ó¦Û°Ó¥Î²£«~©M¥»½Òµ{¬ã¨s¤§¹q´¹Å骺¸ê®Æªí¡C

This section contains circuit examples from commercial products and datasheets of transistors which are studied in this course.


¨ú¦Û°Ó¥Î²£«~ªº¨Ò¤l
Circuit Examples from Commerical Products

uA741¤º³¡¸ÉÀv¹Bºâ©ñ¤j¾¹
uA741 internally compensated op amp, National Semiconductor Corporation

LM101¥~³¡¸ÉÀv¹Bºâ©ñ¤j¾¹
LM101 externally compensated op amp, National Semiconductor Corporation

LM118°ª³t¹Bºâ©ñ¤j¾¹
LM118 high-speed op amp, National Semiconductor Corporation

LF155 JFET¡]ĶªÌµù¡Gµ²«¬³õ®ÄÀ³¹q´¹Åé ¡^¹Bºâ©ñ¤j¾¹
LF155 jfet op amp, National Semiconductor Corporation

OP07§C°¾²¾¹Bºâ©ñ¤j¾¹¡]·PÁÂAnalog Devices, Inc.,2002.¡^
OP07 low-offset op amp (Courtesy of Analog Devices, Inc., 2002.)
(­^¤åPDF)¡B (­^¤åDOC)


TL081 JFET¹Bºâ©ñ¤j¾¹
TL081 jfet op amp, Texas Instruments, Inc.

LM108¶W£]¹Bºâ©ñ¤j¾¹
LM108 super-beta op amp, National Semiconductor Corporation

7805¹qÀ£½Õ¸`¾¹
7805 voltage regulator, National Semiconductor Corporation

LH0091 ³t«×¡Ð¹qÀ£¡]RMS-to-DC¡^Âà´«¾¹
LH0091 RMS-to-DC converter, National Semiconductor Corporation

LM1496­¼ªk¾¹
LM1496 multiplier, National Semiconductor Corporation

AD532­¼ªk¾¹¡A¡]·PÁÂAnalog Devices, Inc.,2002.¡^
AD532 multiplier (Courtesy of Analog Devices, Inc., 2001.)
(­^¤åPDF)¡B (­^¤åDOC)



¹q´¹Å鼯¾Úªí
Transistor Datasheets

2N3904 npn ¸ê®Æªí¡A¨Ó¦ÛFairchild¡]cFairchild Semiconductor.¡^
2N3904 npn datasheet from Fairchild (© Fairchild Semiconductor.)
(­^¤åPDF)¡B (­^¤åDOC)


2N3904 npn ¸ê®Æªí¡A¨Ó¦ÛMotorola¡]·PÁÂMotorola¤¹³\¨Ï¥Î¡^
2N3904 npn datasheet from Motorola (Courtesy of Motorola. Used with permission.)
(­^¤åPDF)¡B (­^¤åDOC)


2N3906 pnp ¸ê®Æªí¡A¨Ó¦ÛFairchild¡]cFairchild Semiconductor.¡^
2N3906 pnp datasheet from Fairchild (© Fairchild Semiconductor.)
(­^¤åPDF)¡B (­^¤åDOC)


2N3906 pnp ¸ê®Æªí¡A¨Ó¦ÛMotorola¡]·PÁÂMotorola¤¹³\¨Ï¥Î¡^
2N3906 pnp datasheet from Motorola (Courtesy of Motorola. Used with permission.)
(­^¤åPDF)¡B (­^¤åDOC)


2N5087 pnp ¸ê®Æªí¡A¨Ó¦ÛMotorola¡]·PÁÂMotorola¤¹³\¨Ï¥Î¡^
2N5087 pnp datasheet from Motorola (Courtesy of Motorola. Used with permission.)
(­^¤åPDF)¡B (­^¤åDOC)


2N5089 npn ¸ê®Æªí¡A¨Ó¦ÛMotorola¡]·PÁÂMotorola¤¹³\¨Ï¥Î¡^
2N5089 npn datasheet from Motorola (Courtesy of Motorola. Used with permission.)
(­^¤åPDF)¡B (­^¤åDOC)


2N5459 njeft ¸ê®Æªí¡A¨Ó¦ÛFairchild¡]©Fairchild Semiconductor.¡^
2N5459 njeft datasheet from Fairchild (© Fairchild Semiconductor.)
(­^¤åPDF)¡B (­^¤åDOC)


LM3086 npn °}¦C¸ê®Æªí¡A¨Ó¦ÛNational Semiconductor Corporation
LM3086 npn array datasheet, National Semiconductor Corporation


µù·N¡G½Ð¤£­n±N³o¨Ç¸ê®Æªí¤¤ªºSPICEÁ|¨Ò¥Î©ó§A¦Û¤vªºÃþ¤ñ¨t²Î¡C¨Ò¦p¡A®³2N3904¨Ó»¡¡A¸ê®Æªí¤¤»¡¥¦ªºs­È¦b100¨ì300¤§¶¡¡A¦ÓSPICEÁ|¨Ò¼Ò«¬°²©w¥¦¤j©ó400¡C¸Ó­È¦³¨Ç¹L«×¼ÖÆ[¡C

Note: Please do not use the datasheet SPICE models in your own simulations. For example, for the 2N3904, while the datasheet says that beta can be between 100 and 300, the SPICE model assumes that it is greater than 400. This value is overly optimistic.


§Ú­Ì§Æ±æ§Ú­ÌªºÃþ¤ñ¨t²Î»P§Ú­Ì¤â¤u­pºâ©M¹êÅç«Ç´ú¶qªºµ²ªG¬Û§k¦X¡CSPICE¶È¶È¬O¤@ºØ¦nªº¼Ò«¬¦Ó¤w¡C¦pªGSPICEªº¦UºØ©Ê¯à«ü¼Ð¡]pi=performance index¡^°Ñ¼Æ¡]¡§Âù·¥µ²´¹ÅéºÞsubckt¡¨¼ÐÃD¤U­±¡^»P§Ú­Ì­Ìªº­pºâ¤£¬OÄY®æ§k¦X¡]¦b´X­Ó¦Ê¤ÀÂI¤º¡^¡A¨º­Ì§Ú­Ìªº¼Ò«¬´N¦³°ÝÃD¤F¡C­È±oªáÂI®É¶¡¦b¹êÅç«Ç¤¤°µ¤@¨Ç´ú¶q¡]¨Ï¥Îªi§Î°O¿ý»ö¨D¥X¹q¬y¼W¯q©M¿é¥Xªý§Ü¡A¨Ï¥Îªý§Ü»ö¨D¥X±H¥Í¹q®e¡^¡A¨Ã°µ¤@¨Ç¤â¤u­pºâ¡]¨Ï¥Îf_T©MV_BE¸ê®Æªí­È¨D¥Xtau_F©MI_S¡^¨Ó»s§@§Ú­Ì¦Û¤vªº¼Ò«¬¡C

We want our simulations to match our hand calculations and our lab measurements. SPICE is only as good as the model we give it. If the list of hybrid-pi parameters (under the "bipolar junction transistors subckt'' heading) from SPICE doesn't match our calculations exactly (within a few percent), then something is wrong with our model. It is well worth our time to make a few measurements in lab (using the curve tracer to find current gain and output resistance, and the impedance meter to find parasitic capacitances) and a few hand calculations (using the datasheet values for f_T and V_BE to find tau_F and I_S) to create our own model.



 
MIT Home
Massachusetts Institute of Technology Terms of Use Privacy