麻省理工学院“开放式课程网页” | 电机工程与计算机科学 | 6.720J 2002秋季课程：集成微电子电路元件

此课程所有的教材几乎都置于网络上，包含一整套完整的课堂讲稿和元件特性描述及设计方面的专题。教授正在为此6.720和类似研究所程度及高等大学程度课程撰写微电子元件物理教科书。这本书的标题暂定为《集成微电子元件：物理及模型》。将被Prentice Hall出版于电子学及超大规模集成电路丛书(C. G. Sodini 为此丛书之编辑)。此课程所用到的大部分图解资料将会出现在此书。

This course offers virtually all of its materials online, including a complete set of lecture notes and device characterization and design projects. Prof. Jesus del Alamo is in the process of writing a textbook for 6.720 and similar graduate-level and advanced undergraduate-level courses in microelectronic device physics. The tentative title of this book is Integrated Microelectronics Devices: Physics and Modeling. It will be published by Prentice Hall in its Electronics and VLSI Series (C. G. Sodini, Series Editor). Most of the graphical material included on this course site will appear in the book.

6.720 课程检视了在矽集成电路应用上的微电子半导体元件物理。主题包含：半导体基本原理、P-N接面、金属-氧化层半导体结构、金属-半导体接面、金氧半导场效电晶体和双载子接面电晶体。此课程着重于藉由能带图来了解元件操作的物理特性及短通道金氧半导场效电晶体元件设计。近代元件的微缩问题也被概述。这门课等同于二点工程设计分数。

6.720 examines the physics of microelectronic semiconductor devices for silicon integrated circuit applications. Topics covered include: semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. The course emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Issues in modern device scaling are also outlined. The course is worth 2 Engineering Design Points.